Park, J.
, Lee, J.
, Venables, D.
, Krause, S.
and Roitman, P.
(1993),
Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator, Proc., Materials Research Society Symposium, Materials Synthesis and Processing Using Ion Beams, Boston, MA, USA (Accessed May 2, 2026)
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Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator
Published
Author(s)
J Park, J. H. Lee, D. Venables, S. J. Krause,
Proceedings Title
Proc., Materials Research Society Symposium, Materials Synthesis and Processing Using Ion Beams
Volume
279
Conference Location
Boston, MA, USA
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created December 30, 1993, Updated October 12, 2021