NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Effects of Heavy Doping on Numerical Simulations of Gallium Arsenide Bipolar Transistors

Published

Author(s)

M. Tomizawa, T. Ishibashi, Herbert S. Bennett, J R. Lowney
Citation
Solid-State Electronics
Volume
35
Issue
6
Pub Type
Journals

Citation

Tomizawa, M. , Ishibashi, T. , Bennett, H. and Lowney, J. (1992), Effects of Heavy Doping on Numerical Simulations of Gallium Arsenide Bipolar Transistors, Solid-State Electronics (Accessed October 11, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created December 30, 1992, Updated October 12, 2021
Was this page helpful?