Vzbay, E.
, Kimukin, I.
, Biyikli, N.
, Ayt|r, O.
, Gvkkavas, M.
, Ulu, G.
, {Umlat}nl{umlat}, M.
, Mirin, R.
, Bertness, K.
and Christensen, D.
(1999),
High-speed >90 % quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 range, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=23150
(Accessed April 30, 2024)
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High-speed >90 % quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 range
Published
Author(s)
E. Vzbay, I. Kimukin, N. Biyikli, O. Ayt|r, M. Gvkkavas, G. Ulu, M. S. {Umlat}nl{umlat}, , ,
Abstract
We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p-i-n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations.Citation
Applied Physics Letters
Volume
74
Issue
8
Pub Type
Journals
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Citation
Created February 21, 1999, Updated October 12, 2021