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Evolution of the Shapes of InAs and InGaAs Quantum Dots
Published
Author(s)
Richard P. Mirin, Alexana Roshko, M. van der Puijl, Andrew G. Norman
Abstract
The exact shape of self-assembled quantum dots is still a controversial subject in the literature, despite the fact that this knowledge is of paramount importance for modeling the energy levels and electron wavefunctions in the quantum dots. We will describe reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and transmission electron microscopy (TEM) measurements on both InAs and InGaAs quantum dots growth on (100) GaAs substrates.
Proceedings Title
Proc., North Amer. Conf. on Molecular Beam Epitaxy
Mirin, R.
, Roshko, A.
, van, M.
and Norman, A.
(2001),
Evolution of the Shapes of InAs and InGaAs Quantum Dots, Proc., North Amer. Conf. on Molecular Beam Epitaxy, Providence, RI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30745
(Accessed November 2, 2025)