Optimization of CMOS MEMS Microwave Power Sensors

Published

August 1, 1999

Author(s)

V. Milanovic, M. Hopcroft, C. A. Zincke, Michael Gaitan, Mona E. Zaghloul

Abstract

Micromachined power sensors with operation up to 50 GHz were recently achieved in CMOS technology. to improve their sensitivity and signal-to-noise ratio, while maintaining microwave performance, several design parameters must be considered, such as the number and placement of thermocouples. This paper presents experimental and analytical thermal characterization of the sensors, which provides insight into the proper adjustment of the layout parameters. Experimental results were obtained by indirect measurements of the sensor temperature distribution under various applied power conditions. A simple and approximate model was developed, and adjusted based on experimental results, which was then used to show the effects of the variations in layout parameters on the overall device sensitivity. The model includes thermoelectric Peltier and Thomson effects.

Proceedings Title

Proc., 1999 International Symposium on Circuits and Systems

Conference Dates

May 30-June 2, 1999

Conference Location

Orlando, FL, USA

Pub Type

Conferences

Keywords

CMOS, MEMS, MOSIS, micromachined, sensors, thermocouple

Citation

Milanovic, V. , Hopcroft, M. , Zincke, C. , Gaitan, M. and Zaghloul, M. (1999), Optimization of CMOS MEMS Microwave Power Sensors, Proc., 1999 International Symposium on Circuits and Systems, Orlando, FL, USA (Accessed October 16, 2025)