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PUBLICATIONS

Switching in Spin-Valve Devices in Response to Subnanosecond Longitudinal Field Pulses

Published

Author(s)

Shehzaad F. Kaka, Stephen E. Russek

Abstract

We have fabricated spin-valve devices in a high-speed test structure that allows subnanosecond pulsed field excitation and high-bandwidth observation of the magnetoresistance response. The switching response varies for low-amplitude field pulses and approaches a consistent fast switch of less than 1 ns for field pulses of higher amplitude. For several pulse widths and amplitudes, the device switches into metastable states. The threshold amplitude fo the write-pulse was measured as a function of pulse duration for pulses as small as 250 ps in duration.
Citation
Journal of Applied Physics
Volume
87
Issue
9
Pub Type
Journals

Keywords

GMR, MRAM, spin-valve, switching

Citation

Kaka, S. and Russek, S. (2000), Switching in Spin-Valve Devices in Response to Subnanosecond Longitudinal Field Pulses, Journal of Applied Physics (Accessed October 7, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created April 30, 2000, Updated October 12, 2021
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