Spontaneously grown GaN and AlGaN nanowires

Published

January 1, 2006

Author(s)

Kristine A. Bertness, Alexana Roshko, Norman A. Sanford, Joy Barker, Albert Davydov

Abstract

We have identified crystal growth conditions in gas-source molecular beam epitaxy (MBE) that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (1 1 1) substrates. The nanowires were oriented along the GaN c-axis and normal to the substrate surface. Unlike in many other reports of GaN nanowire growth, no metal catalysts were used. Low growth rates at substrate temperatures near 820 1C were combined with high nitrogen flux (partially dissociated with RF plasma excitation) to form well-separated GaN wires with diameters from 50 to 250 nm in diameter and lengths ranging from 2 to 7 υm. The nanowires grew out of an irregular matrix layer containing deep faceted holes. X-ray diffraction indicated that the wires were fully relaxed and aligned to the silicon substrate. The growth morphology was strongly affected by the presence of Al and Be. The changes suggest that surface diffusion is a primary driving force in the growth of GaN nanowires with MBE.

Citation

Journal of Crystal Growth

Volume

287

Issue

2

Pub Type

Journals

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Keywords

gallium nitride, nanostructures, molecular beam epitaxy, growth mechanism, nitrides

Citation

Bertness, K. , Roshko, A. , Sanford, N. , Barker, J. and Davydov, A. (2006), Spontaneously grown GaN and AlGaN nanowires, Journal of Crystal Growth, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32042 (Accessed October 3, 2025)