Composite Substrate Research for Large-format HgCdTe IRFPAs

Published

April 1, 2003

Author(s)

N. K. Dhar, Y Chen, P M. Brill, Paul M. Amirtharaj, S Velicu, P Boieriu, Anthony G. Birdwell

Abstract

Research on silicon based composite substrates is being conducted at the Army Research Laboratory. These substrates can be used to deposit HgCdTe alloys to fabricate large-format infrared photodetector arrays. Traditionally, composite structures are fabricated by growing CdZnTe buffer layers on Si substrates using molecular beam epitaxy process. Recently, we have demonstrated that composite structures using CdSeTe can also be used. The CdSeTe compound offers better surface morphology and control of composition. In this work we present our results on the Si-based substrate technology and its application in the use of substrate materails for LWIR HgCdTe detector development.

Proceedings Title

Proceedings of SPIE

Conference Dates

March 10-14, 2003

Conference Location

Baltimore, MD, USA

Conference Title

SPIE - The International Society for Optical Engineering

Pub Type

Conferences

Keywords

CdSeTe, Composite Substrates, Infrared Detectors, Molecular Beam Epitaxy, Photoreflectance, Si, HgCdTe

Citation

Dhar, N. , Chen, Y. , Brill, P. , Amirtharaj, P. , Velicu, S. , Boieriu, P. and Birdwell, A. (2003), Composite Substrate Research for Large-format HgCdTe IRFPAs, Proceedings of SPIE, Baltimore, MD, USA (Accessed October 28, 2025)