NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Infrared Absorption Cross Section of Arsenic in Silicon in the Impurity Band Region of Concentration

Published

Author(s)

Jon C. Geist
Citation
Optics Letters
Volume
28
Issue
6
Pub Type
Journals

Citation

Geist, J. (1989), Infrared Absorption Cross Section of Arsenic in Silicon in the Impurity Band Region of Concentration, Optics Letters (Accessed October 10, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created March 15, 1989, Updated February 17, 2017
Was this page helpful?