NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

The Future of Gate Dielectrics Considered

Published

Author(s)

Curt A. Richter

Abstract

Symposium R, Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, provided a large (20 invited speakers and more than 100 total presentations) and exciting overviews of many possible solutions for technologically critical issues associated with present-day and near-future MOS gate dielectrics. Topical sessions were held on a range of subjects including atomic scale control of the dielectric/Si interface, advances in ultrathin oxides and oxynitrides, high-k alternate gate dielectrics, and a joint session (with Symposium M) on the reliability of ultrathin gate dielectrics.
Citation
MRS Bulletin
Pub Type
Others

Keywords

ULSI gate dielectrics, MOS gate dielectrics, dielectric/Si interface, ultrathin oxides and oxynitrides, high-k alternate gate dielectrics, ultrathin gate dielectrics

Citation

Richter, C. (1999), The Future of Gate Dielectrics Considered, MRS Bulletin (Accessed October 13, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created July 1, 1999, Updated February 17, 2017
Was this page helpful?