On-Wafer Measurements of Nonlinear Effects in High Temperature Superconductors

Published

March 1, 2001

Author(s)

James Booth, Leila R. Vale, Ronald H. Ono

Abstract

We present the results of comprehensive on-wafer microwave probe station measurements of the nonlinear properties of coplanar waveguide devices patterned from HTS thin films. We introduce a sequence of measurements and analysis that is designed to describe the nonlinear response of microwave devices in increasingly general terms, and that verifies the resulting description with a number of different nonlinear measurements of different patterned devices. We demonstrate the use of this methodology to analyze the nonlinear response of YBCO thin films at 76K, and find that all of our measurements can be satisfactorily explained by a current-dependent penetration depth of the form 1=10[1+J/JO)2]. The parameter JO is a current density scale that describes the strength of the material nonlinearity, and can be used as a suitable parameter for optimizing film growth techniques.

Citation

IEEE Transactions on Applied Superconductivity

Volume

11

Issue

1

Pub Type

Journals

Citation

Booth, J. , Vale, L. and Ono, R. (2001), On-Wafer Measurements of Nonlinear Effects in High Temperature Superconductors, IEEE Transactions on Applied Superconductivity (Accessed October 10, 2025)