Room-temperature Single-electron Memory Made by Pulse-mode Atomic Force Microscopy Nano-oxidation Process on Atomically Flat Alpha-alumina Substrate

Published

January 10, 2000

Author(s)

K Matsumoto, Y Gotoh, T Maeda, John A. Dagata, J S. Harris

Abstract

A single-electron memory was fabricated using the improved pulse-mode atomic force microscopy nano oxidation process which oxidized the surface of the thin titanium (Ti) metal on the atomically flat -alumina (-Al2O3) substrate and formed the narrow oxidized titanium (TiOx) line that works as a tunnel junction for the device. This single-electron memory consists of the multitunnel junction and a memory capacitance. The single-electron transistor, which works as an electrometer, was connected to the memory node of the single-electron memory to detect the potential change of the memory node by the injection of the individual electrons. The fabricated single-electron memory showed the hysteresis loop even at room temperature by the return trip of the memory bias when starting from 0 to 10 V and again coming back to 0 V. About 25 electrons were stored at the memory node.

Citation

Applied Physics Letters

Volume

76(2)

Pub Type

Journals

Citation

Matsumoto, K. , Gotoh, Y. , Maeda, T. , Dagata, J. and Harris, J. (2000), Room-temperature Single-electron Memory Made by Pulse-mode Atomic Force Microscopy Nano-oxidation Process on Atomically Flat Alpha-alumina Substrate, Applied Physics Letters (Accessed October 15, 2025)