NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Application of a CMP Model to Tungsten CMP

Published

Author(s)

E W. Paul

Abstract

A general model of chemical mechanical polishing (CMP) has been derived which shows the dependence of the polishing rate on the concentration of chemicals and abrasives in the slurry. This paper applies the model to tungsten CMP and describes the chemistry of tungsten CMP in some detail.
Citation
Journal of Electrical Chemical Science
Pub Type
Journals

Keywords

CMP, model, Tungsten

Citation

Paul, E. (2008), Application of a CMP Model to Tungsten CMP, Journal of Electrical Chemical Science (Accessed October 21, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created October 16, 2008
Was this page helpful?