S and Si Ion-Implantation in GaSb Grown on GaAs

Published

December 1, 1999

Author(s)

M V. Rao, A K. Berry, T Q. Do, M C. Ridgway, P Chi, J Waterman

Abstract

Single and multiple energy S and Si ion-implantations were performed at room temperature (RT) and at 200 C into GaSb epitaxial layers grown on semi-insulating GaAs substrates. The implanted material was annealed with a Si₃N₄ cap at 400-600 C for 5 min. Secondary ion mass spectrometry measurements indicated thermal stability of Si and S implants even for 600 C annealing. Appreciable donor electrical activations of Si and S were obtained only for 200 C implantation for annealing temperatures > 500 C. For S implantation the calculated substitutional activation is 50%. Rutherford backscattering/channeling measurements indicated lattice quality close to the virgin level for samples annealed at 600 C. N-type conduction was not observed in GaSb bulk material implanted at either RT or 200 C.

Citation

Journal of Applied Physics

Volume

86

Issue

No. 11

Pub Type

Journals

Keywords

doping, ion-implantation, secondary ion mass spectrometry

Citation

Rao, M. , Berry, A. , Do, T. , Ridgway, M. , Chi, P. and Waterman, J. (1999), S and Si Ion-Implantation in GaSb Grown on GaAs, Journal of Applied Physics (Accessed July 4, 2025)