Hot-Electron Attenuation Lengths in Ultrathin Magnetic Films

Published

May 1, 2000

Author(s)

R P. Lu, B A. Morgan, K L. Kavanagh, Cedric J. Powell, P J. Chen, F Serpa, W F. Egelhoff

Abstract

Ballistic electron emission microscopy (BEEM) is used to measure hot electron transport across magnetic metal multilayers. Room temperature measurements in air have been carried out on Au/M/Si(100), Au/M/Au/Si(100) and Au/M/PtSi/Si diodes, that were sputter deposited at 175K or 300K. where M is Co, Fe, Ni, Cu or Ni₈₁Fe₁₉. Plots of log BEEM current versus M thickness are linear giving hot electron (1.5 eV) attenuation lengths (ALs), for Au/M/Si diodes (M - Co. Fe. Ni₁₉. and Ni) of 0.3 nm. 0.5 nm. 0.8 nm and 1.3 nm. respectively (with typical standard uncertainties of 10%). Magnetic metal sandwich diodes. (Au/M/Au/Si) show larger ALs. 0.8 nm and 2.1 nm. for M = Co and Ni₈₁Fe₁₉, respectively. PtSi interlayers improve the surface roughness but have little effect on the AL while low temperature depositions increase the AL. We presume that the increases in the AL are due to better microstructure or to changes in elastic scattering at interfaces.

Citation

Journal of Applied Physics

Volume

87

Issue

No. 9

Pub Type

Journals

Keywords

Ballistic electron emission microscopy (, hot-electron attenuation lengths, magnetic metal multilayers, ultra-thin magnetic films

Citation

Lu, R. , Morgan, B. , Kavanagh, K. , Powell, C. , Chen, P. , Serpa, F. and Egelhoff, W. (2000), Hot-Electron Attenuation Lengths in Ultrathin Magnetic Films, Journal of Applied Physics (Accessed August 16, 2026)

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