Improved Performance in Electron-Excited Energy Dispersive X-Ray Spectrometry With the Silicon Drift Detector (SDD): Output Count Rates Above 100 kHz With Application to X-Ray Imaging

Published

October 16, 2008

Author(s)

Dale E. Newbury

Abstract

Energy dispersive x-ray spectrometry (EDS) is a key characterization method in electron beam instruments: the scanning electron microscope (SEM), analytical electron microscope (AEM), and the scanning transmission electron microscope (STEM). The performance of the conventional silicon (lithium) energy dispersive x-ray spectrometer [Si(Li) EDS] is now exceeded by the silicon drift detector (SDD) in three critical performance parameters: (1) a factor of 5 to 10 higher maximum output count rate for a given spectral resolution performance; (2) better resolution for a detector of a given area; and (3) much higher operating temperature, about 230 K to 250 K rather than 80K 100 K. The SDD offers particular advantages for x-ray mapping of bulk specimens in the SEM where the primary beam current can be increased to produce a high x-ray flux. For atomic level characterization, the SDD characteristics will permit new designs of high solid angle detectors that can efficiently capture x-rays from the low flux sources associated with thin specimens and low current, nanometer-scale electron beams.

Citation

e-Journal of Surface Science and Nanotechnology (e-JSSNT)

Pub Type

Journals

Keywords

electron microscopy, scanning electron microscopy, scanning transmission electron microscop, x-ray emission, x-ray spectrometry

Citation

Newbury, D. (2008), Improved Performance in Electron-Excited Energy Dispersive X-Ray Spectrometry With the Silicon Drift Detector (SDD): Output Count Rates Above 100 kHz With Application to X-Ray Imaging, e-Journal of Surface Science and Nanotechnology (e-JSSNT) (Accessed October 8, 2025)