Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

High Resolution Spectrum of Xenon Ions at 13.4 nm

Published

Author(s)

S S. Churilov, Y N. Joshi, Joseph Reader

Abstract

The spectrum of xenon excited in a low-inductance vacuum spark was photographed at high resolution in the region 9.5 nm - 15.5 nm. The observed transitions were identified as belonging to ions from Xe8+ to Xe13+. In the region of importance for EUV lithography around 13.4 nm, the strongest lines were identified as 4d8 -4d7 5p transitions in Xe10+. The identifications were made by using electronic energy parameters extrapolated along the isoelectronic sequence.
Citation
Optics Letters
Volume
28
Issue
No. 16

Keywords

extreme ultraviolet, ions, microlithography, spectrum, wavelengths, xenon

Citation

Churilov, S. , Joshi, Y. and Reader, J. (2003), High Resolution Spectrum of Xenon Ions at 13.4 nm, Optics Letters (Accessed October 11, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created July 31, 2003, Updated October 12, 2021
Was this page helpful?