Electron Injection, Recombination and Halide Oxidation Dynamics at Dye-Sensitized Metal Oxide Interfaces

Published

May 1, 2000

Author(s)

T Heimer, Edwin J. Heilweil, C A. Bignozzi, G J. Meyer

Abstract

Time-resolved infrared measurements indicate ultrafast, < 350 fs electron injection from (4,4'dcb)₂Ru(NCS)₂ (1) and (5,5'dcb)₂Ru(NCS)₂ (2) to nanostructured TiO₂ electrodes. (4,4'dcb) = (4,4'-COOH-2,2'-bipyridine)} Although rapid, the injection from 2 apparently occurs with a lower quantum yield, then that from 1. explaining a lower overall photon-to-current efficiency for 2/TiO₂ solar cells. Transient visible spectroscopy reveals similar rates of both halide oxidation and injected electron-oxidized dye recombination for the two sensitizers. Substituting SnO₂ for TiO₂ increases the electron injection yield from 2 in the case of transparent metal oxide films and improves the photon to current efficiency. Results indicate a wavelength-dependent electron injection yield.

Citation

Journal of Physical Chemistry A

Volume

104

Issue

No. 18

Pub Type

Journals

Keywords

dynamics, electron injection, electron transfer, interfacial, sensitized, time-resolved, tin oxide, titanium dioxide

Citation

Heimer, T. , Heilweil, E. , Bignozzi, C. and Meyer, G. (2000), Electron Injection, Recombination and Halide Oxidation Dynamics at Dye-Sensitized Metal Oxide Interfaces, Journal of Physical Chemistry A (Accessed October 18, 2025)