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Laser-Pulse Technique for Measuring the Thermal Boundary Resistance of a Dielectric-Semiconductor Interface
Published
Author(s)
Erik K. Hobbie, A S. DeReggi
Abstract
We describe a technique for simultaneously measuring the bulk and interfacial thermal transport coefficients of semiconductor supported dielectric films. Following a 100 ns pulse from a Q-switched ruby laser, the thermal diffusivity of the dielectric is obtained from the early-time electrothermal response, and the thermal boundary resistance of the dielectric-semiconductor interface is then obtained from the late-time decay of the signal. Data for a polyimide film spin coated on a p-doped Si[111] substrate is presented. The technique requires independent measurement of the electrode thermal mass and the specific heat of the dielectric material.
Hobbie, E.
and DeReggi, A.
(2008),
Laser-Pulse Technique for Measuring the Thermal Boundary Resistance of a Dielectric-Semiconductor Interface, Journal of Applied Physics
(Accessed October 6, 2025)