Effects of Laterally and Vertically Neighboring Quantum Dots on Formation of a New Quantum Dot

Published

May 1, 2004

Author(s)

B. Yang, Vinod Tewary

Abstract

We apply the elastic energy release rate (EERR) to identify the favored location ofquantum dot (QD) formation in the presense of a laterally or vertically neighboring grown QD on a linear anisotropic elastic substrate. The EERR is defined as the relaxation energy per unit volume of QD growth. Numerical reuslts for InAs QDs on a GaAs (001) substrate are reported. It is shown that the presence of a laterally neighboring QD inhibits the driving force for the formation of a new QD. In contrast, the presence of buried (vertically) neighboring QD enhances it for the formation of a new QD at its favorable location.

Proceedings Title

Self-assembled Nanostructured Materials, Symposium| |Self-assembled Nanostructured Materials|Materials Research Society

Volume

775

Conference Dates

April 1, 2003

Conference Location

Undefined

Conference Title

Materials Research Society Symposium Proceedings

Pub Type

Conferences

Keywords

elastic energy release rate, energetics, lattice mismatch, quantum dot, self-assembly

Citation

Yang, B. and Tewary, V. (2004), Effects of Laterally and Vertically Neighboring Quantum Dots on Formation of a New Quantum Dot, Self-assembled Nanostructured Materials, Symposium| |Self-assembled Nanostructured Materials|Materials Research Society, Undefined (Accessed October 10, 2025)