Spontaneous Compositional Modulation in the A1GaN Layers of a Thick A1GaN/GaN Multilayer Structure

Published

January 1, 2001

Author(s)

Igor Levin, Lawrence H. Robins, Mark D. Vaudin, J A. Tuchman, E Lakin, M J. Sherman, J Ramer

Abstract

A periodic modulation with the wavevector parallel to the [0001] direction was observed in the AlGaN layers of a thick AlGaN/GaN multilayer heterostructure grown by metalorganic chemical vapor disposition. The modulation was attributed to a nearly sinusoidal spatial variation of the Al/Ga ratio with an average periodicity of about 3 nm. The observed periodicity was highly regular and incommensurate with the periodicity of the underlying lattice. The average Al fraction in the Al_xGa_1-xN layers was estimated to be x=O.115 0.010 and peak-to-valley amplitude of the modulation was estimated to be δx=0.075 0.016.

Citation

Journal of Applied Physics

Volume

89

Issue

No. 1

Pub Type

Journals

Keywords

AlGaN, compositional modulation, GaN, multilayers, TEM, X-ray diffraction

Citation

Levin, I. , Robins, L. , Vaudin, M. , Tuchman, J. , Lakin, E. , Sherman, M. and Ramer, J. (2001), Spontaneous Compositional Modulation in the A1GaN Layers of a Thick A1GaN/GaN Multilayer Structure, Journal of Applied Physics (Accessed October 12, 2025)