Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)

Published

November 1, 2001

Author(s)

Denis Tsvetkov, Y Melnik, Albert Davydov, Alexander J. Shapiro, O Kovalenkov, J B. Lam, J J. Song

Abstract

Multi layer AlGaN/GaN epitaxial structures were grown on SiC by HVPE method. Characterization of the grown structures was performed using SEM, SIMS, mercury probe, electroluminescence and photoluminescence techniques. Thicknesses of nitride layers in the nanometer range were achieved. Stimulated emission from double confined heterostructure grown by HVPE was detected at room temperature under optical pumping. Short wave UV electroluminescence (λ_max 340-350 nm) was measured for p-AlGaN/n-AlGaN structures having up to 38 mol.% and 9 mol.% of AIN in p-AlGaN carrier emitter layers and n-AlGaN light emitting layers receptively.

Citation

Physica Status Solidi A-Applications and Materials Science

Volume

188

Issue

No. 1

Pub Type

Journals

Keywords

AlGaN, GaN, HUPE, multilayer

Citation

Tsvetkov, D. , Melnik, Y. , Davydov, A. , Shapiro, A. , Kovalenkov, O. , Lam, J. and Song, J. (2001), Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE), Physica Status Solidi A-Applications and Materials Science (Accessed October 10, 2025)