Transpinnor: A New Giant Magnetoresistive Spin-Valve Device

Published

April 1, 2002

Author(s)

E J. Torok, S Zurn, S Bae, P J. Chen, William F. Egelhoff Jr., L Sheppard, R Spitzer, J Judy

Abstract

This paper discusses the fundamental physics and device-operating mechanisms of Transpinnor, a kind of multi-functional active solid state device, newly designed by Integrated magnetoelectronics corporation (IME). The Transpinnor is the modified Wheatstone bridge configuration, in which the four resistors are substituted by GMR elements. Close-flux structures of metallic pseudo spin valves and anti-ferromagnetic (AF) α-Fe₂O₃ exchange biased bottom giant magnetoresistive (GMR) spin valve (BSV) have been used for the GMR elements to investigate the magneto-electronic device characteristics of Transpinnor. AC and DC output characteristics of patterned Transpinnor suggest that Transpinnor can be promisingly replaced for transistors and transformers, which are currently used in microelectronic technology.

Citation

IEEE Transactions on Magnetics

Pub Type

Journals

Keywords

giant magnetoresistance (GMR), random access memory, transpinnor

Citation

Torok, E. , Zurn, S. , Bae, S. , Chen, P. , Egelhoff Jr., W. , Sheppard, L. , Spitzer, R. and Judy, J. (2002), Transpinnor: A New Giant Magnetoresistive Spin-Valve Device, IEEE Transactions on Magnetics (Accessed October 15, 2025)