Layer Perfection in Ultrathin InAS Quantum Wells in GaAs(001)

Published

January 1, 2000

Author(s)

J A. Gupta, S P. Watkins, E D. Crozier, Joseph Woicik, D A. Harrison, D Jiang, I J. Pickering, B A. Karlin

Abstract

X-ray diffraction (XRD), X-ray standing wave (XSW) and X-ray absorption fine structure (XAFS) measurements were used to assess the layer perfection and positions of 1 and 2 monolayer (ML) InAs quantum wells buried in GaAs(001). Photoluminescence (PL) spectroscopy was used to correlate the structural and optical properties of the films. Growth temperature effects were studied in a series of samples produced by metalorganic vapor phase epitaxy (MOVPE) between 400 and 600/C. The XSW coherent position of the In atoms decreases with increasing temperature in the 1 ML samples, and the optimal growth temperature is near 550/C, as evidenced by the coherent position of 1.15

Citation

Physical Review B (Condensed Matter and Materials Physics)

Volume

61

Issue

No. 3

Pub Type

Journals

Keywords

fine structure (XAFS), metalorganic vapor phase epitaxy (MOVPE), onolayer (ML), x-ray absorption, x-ray diffraction (XRD), x-ray standing wave (XSW)

Citation

Gupta, J. , Watkins, S. , Crozier, E. , Woicik, J. , Harrison, D. , Jiang, D. , Pickering, I. and Karlin, B. (2000), Layer Perfection in Ultrathin InAS Quantum Wells in GaAs(001), Physical Review B (Condensed Matter and Materials Physics) (Accessed October 10, 2025)