Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Laser-induced desorption of In and Ga from Si(100) and adsorbate enhanced surface damage

Published

Author(s)

P G. Strupp, A L. Alstrin, K. Kort, S R. Leone
Citation
Mat Res Soc Symp Proc Vol
Volume
236

Citation

Strupp, P. , Alstrin, A. , Kort, K. and Leone, S. (1992), Laser-induced desorption of In and Ga from Si(100) and adsorbate enhanced surface damage, Mat Res Soc Symp Proc Vol (Accessed November 6, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created December 31, 1991, Updated October 12, 2021
Was this page helpful?