Magnetoresistance Values Exceeding 21 Percent in Symmetric Spin Valves

Published

January 1, 1995

Author(s)

William F. Egelhoff Jr., T Ha, R Misra, Y Kadmon, J Nir, Cedric J. Powell, Mark D. Stiles, Robert McMichael, C Lin, J Sivertsen, J Judy, K Takano, A Berkowitz, T Anthony, J Brug

Abstract

We report values of the giant magnetoresistance (GMR) effect exceeding 21% in symmetric spin valves, the highest values ever reported for such structures. The key elements in this achievement are the use of a Co/Cu/Co/Cu/Co multilayer in which the center Co layer is substantially thicker than the outer Co layers and the use of the antiferromagnetic insulator NiO at the top and bottom to pin the adjacent Co layers magnetically. The relative Co layer thicknesses suggest that some specular scattering of conduction electrons may occur at the metal/insulator interfaces and may enhance the GMR.

Citation

Journal of Applied Physics

Volume

78

Issue

1

Pub Type

Journals

Citation

Egelhoff Jr., W. , Ha, T. , Misra, R. , Kadmon, Y. , Nir, J. , Powell, C. , Stiles, M. , McMichael, R. , Lin, C. , Sivertsen, J. , Judy, J. , Takano, K. , Berkowitz, A. , Anthony, T. and Brug, J. (1995), Magnetoresistance Values Exceeding 21 Percent in Symmetric Spin Valves, Journal of Applied Physics (Accessed October 12, 2025)