Rendell, R.
and Girvin, S.
(1981),
Hall Voltage Dependence on Inversion Layer Geometry in the Quantum Hall-Effect Regime, Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620201 (Accessed April 30, 2026)
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Hall Voltage Dependence on Inversion Layer Geometry in the Quantum Hall-Effect Regime
Published
Author(s)
R W. Rendell, S Girvin
Abstract
A calculation of the Hall voltage is presented within a model of a finite two-dimensional inversion layer. An explicit form for the electric field is obtained and this is found to have a power-law singularity in the corners of the inversion layer. This singularity is most pronounced in the quantum Hall-effect regime where the Hall angle approaches π/2. The error in measuring the Hall voltage in this regime due to the shorting effect of the source and drain is calculated. This is found to be negligible at the level required for a new determination of the fine-structure constant and development of a new resistance standard using inversion-layer measurement in the quantum Hall-effect regime. Limitations of the model and other possible sources of error are briefly discussed.Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
23
Pub Type
Journals
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Created June 15, 1981, Updated April 21, 2026