Stiles, M.
and Hamann, D.
(1989),
Electron Transmission Through NiSi<sub>2</sub>-Si Interfaces, Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620349 (Accessed May 22, 2026)
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Electron Transmission Through NiSi2-Si Interfaces
Published
Author(s)
, D Hamann
Abstract
Calculations of electron transmission through epitaxial NiSi2/Si(111) interfaces illustrate the versatality of a newloy developed first-principles technique. The transmission is poor and very dependent on the interface structure; of the electrons of primary importance for transport, more than 50% are reflected by the type-A orientation interface and more than 80% by the type B.Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
40
Issue
2
Pub Type
Journals
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Created January 1, 1989, Updated May 7, 2026