Apell, S.
, Penn, D.
and Stiles, M.
(1992),
Theory of Photo-induced Resonant Tunneling in Heterojunctions, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620405 (Accessed May 21, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Theory of Photo-induced Resonant Tunneling in Heterojunctions
Published
Author(s)
S Apell, ,
Abstract
The theoretical basis for understanding photo-assisted resonant tunneling is generally taken to be the theory by Tien and Gordon [Phys. Rev. 129, 647 (1963)] in which the effect of a photon field on an energy state is to create sidebands at multiples of the photon energy. An alternative mechanism in which bulk photoabsorption is the photoexcitation mechanism is discussed. The two theories take the same form in the weak- field limit, and an expression is given for the relative size of tunneling currentsCitation
Journal of Applied Physics
Volume
72
Issue
3
Pub Type
Journals
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created January 1, 1992, Updated April 21, 2026