10 kV, 5A 4H-SiC Power DMOSFET

Published

May 1, 2006

Author(s)

Sei-Hyung Ryu, Sumi Krishnaswami, Hull Brett, James Richmond, Anant Agarwal, Allen R. Hefner Jr.

Abstract

In this paper, we report 4H-SiC power DMOSFETs capable of blocking 10 kV. The devices were scaled up to 5 A, which is a factor of 25 increase in device area compared to the previously reported value. The devices utilized 100 υm thick n-type epilayers with a doping concentration of 6 x 1014 cm-3 for the drift layer, and a floating guard ring based edge termination structure was used. The gate oxide layer was formed by thermal oxidation at 1175oC, followed by an NO anneal. A peak effective channel mobility of 13 cm2/Vs was extracted from a test MOSFET with a W/L of 150 υm / 150 υm, built adjacent to the power DMOSFETs. A 4H-SiC DMOSFET with an active area of 0.15 cm2 showed a specific on-resistance of 111 mOhm}-cm2 at room temperature with a gate bias of 15 V. The device shows a leakage current of 3.3 ??A, which corresponds to a leakage current density of 11 υA-cm-2 at a drain bias of 10 kV.

Citation

IEEE Transactions on Electron Devices

Pub Type

Journals

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Keywords

High-Voltage, power MOSFET, Silicon-Carbide

Citation

Ryu, S. , Krishnaswami, S. , Brett, H. , Richmond, J. , Agarwal, A. and Hefner Jr., A. (2006), 10 kV, 5A 4H-SiC Power DMOSFET, IEEE Transactions on Electron Devices, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32301 (Accessed October 10, 2025)