P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy

Published

January 1, 2001

Author(s)

David S. Simons, P Chi, S L. Rommel, T E. Dillon, K D. Hobart, P E. Thompson, P R. Berger

Abstract

Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A p-on-n configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.

Citation

Journal of Vacuum Science and Technology B

Volume

19

Issue

No. 1

Pub Type

Journals

Keywords

antimony, boron, MBE, peak-to-valley current ratio, segregation, silicon, SIMS, surface

Citation

Simons, D. , Chi, P. , Rommel, S. , Dillon, T. , Hobart, K. , Thompson, P. and Berger, P. (2001), P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy, Journal of Vacuum Science and Technology B (Accessed October 1, 2025)