A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators

Published

January 1, 2001

Author(s)

Curt A. Richter, Allen R. Hefner Jr., Eric M. Vogel

Abstract

We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar trends accounting for polysilicon depletion and quantum-mechanical confinement, quantitatively, there is difference of up to 20% in the calculated accumulation capacitance for devices with ultra-thin gate dielectrics. This discrepancy leads to large inaccuracies in the values of dielectric thickness extracted from capacitance measurements and illustrates the importance of consistency during capacitance-voltage analysis and the need to fully report how such analysis is done.

Citation

IEEE Electron Device Letters

Volume

22

Issue

1

Pub Type

Journals

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Keywords

capacitance, effective, oxide thickness, gate dielectric, MOS devices, polysilicon depletion, inversion quantization

Citation

Richter, C. , Hefner Jr., A. and Vogel, E. (2001), A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators, IEEE Electron Device Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=16 (Accessed October 11, 2025)