The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed.
Proceedings Title: Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates: October 8-12, 2006
Conference Location: Tampa, FL
Conference Title: IEEE Industrial Applications Society Meeting
Pub Type: Conferences
", " "DARPA HPE, " "HPE, " "HV-HF (High-voltage, high-frequency power devcies, " "power devices, " "solid state power substations, " "switch mode power conversion, " forward-bia degradation, "silicon-carbide, ) "wide bandgap semiconductor