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Large Area, Ultra-high Voltage 4H-SiC PiN Rectifiers
Published
Author(s)
Ranbir Singh, Kenneth G. Irvine, D C. Capell, James Richmond, David W. Berning, Allen R. Hefner Jr., John W. Palmour
Abstract
This paper reports the design, fabrication, and high temperature characteristics of 1 mm2, 4 mm2, and 9 mm2 4H-SiC rectifiers with 6 kV, 5 kV, and 10 kV blocking voltage respectively. These results were obtained from two lots in an effort to increase the total power levels on such rectifiers. An innovative design utilizing a highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were used in order to realize good on-state as well as stable blocking characteristics. For the 1 mm2 and 4 mm2 rectifier, a forward voltage drop of less than 5 V was observed at 500 A/cm2 in the 25 0C to 225 0C temperature range, and the peak reverse recovery current shows a modest 50% increase. On the 10 kV, 9 mm2 rectifier, a forward voltage drop of less than 4.8 V was observed at 100 A/cm2 in the entire 25 0C to 200 0C temperature range. For this device, the reverse recovery characteristics show a modest 110% increase in the peak reverse recovery current from 25 0C to 200 0C. A dramatically low Qrr of 3.8 uC was obtained at a forward current density of 220 A/cm2 at 200 0C for this ultra high voltage rectifier. These devices show that more than four orders of magnitude reduction in reverse recovery charge is obtained in 4H-SiC rectifiers as compared to comparably rated Si rectifiers.
Singh, R.
, Irvine, K.
, Capell, D.
, Richmond, J.
, Berning, D.
, Hefner Jr., A.
and Palmour, J.
(2002),
Large Area, Ultra-high Voltage 4H-SiC PiN Rectifiers, IEEE Transactions on Electron Devices, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31300
(Accessed October 17, 2025)