Zhou, H.
, Fu, J.
and Silver, R.
(2005),
The Influence of Defects on the Morphology of Si (111) Etched in NHF, Journal of Physical Chemistry
(Accessed December 3, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
The Influence of Defects on the Morphology of Si (111) Etched in NHF
Published
Author(s)
, ,
Abstract
We have implemented a kinetic Monte-Carlo (KMC) simulation to study the morphologies of Si (111) surfaces etched in NHF. Although our initial simulations reproduced the previous results from Hines, it failed to produce the morphologies observed in our experiments. By introducing both dopant sites and lattice defect sites into the model, we are able to simulate samples having different dopant elements and densities as well as different defect concentrations. With the modified KMC simulation, the simulated surface morphologies agree well with the morphologies observed in our experiments. The enhanced model also gives insights to the formation mechanism multiple level stacking pits, a notable morphology on the etched surfaces of samples with very small miscut angles.Citation
Journal of Physical Chemistry
Volume
109
Pub Type
Journals
Keywords
kinetic Monte-Carlo (KMC) simulation, lattice defect sites, morphologies of Si (11), stacking pits
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created January 1, 2005, Updated February 19, 2017