Combinatorial screening of the effect of temperature on the microstructure and mobility of a high performance polythiophene semiconductor

Published

January 1, 2007

Author(s)

Leah A. Lucas, Dean M. DeLongchamp, Brandon M. Vogel, Eric K. Lin, Michael J. Fasolka, Daniel A. Fischer, Iain McCulloch, Martin Heeney, Ghassan Jabbour

Abstract

Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly2,5-bis3-dodecylthiophen-2ylthieno3,2-bthiophene thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3 cm2 V−1 s−1. Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition.

Citation

Applied Physics Letters

Pub Type

Journals

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Keywords

combinatorial analysis, multivariate methods, organic semiconductor, transistor

Citation

Lucas, L. , DeLongchamp, D. , Vogel, B. , Lin, E. , Fasolka, M. , Fischer, D. , McCulloch, I. , Heeney, M. and Jabbour, G. (2007), Combinatorial screening of the effect of temperature on the microstructure and mobility of a high performance polythiophene semiconductor, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852694 (Accessed October 10, 2025)