Regan, R.
, Atwater, H.
, Guyer, J.
, Meserole, E.
and Gorrsky, M.
(2006),
Kinetics Governing Phase Separation of Nanostructured Sn(x)Ge(1a 'x) Alloys., Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853551
(Accessed October 7, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Kinetics Governing Phase Separation of Nanostructured Sn(x)Ge(1a 'x) Alloys.
Published
Author(s)
Regina Regan, Harry A. Atwater, , Erik Meserole, Mark S. Gorrsky
Abstract
We have studied the dynamic phenomenon of SnxGe1a 'x/Ge phase separation during deposition by molecular beam epitaxy on Ge(001) substrates.Phase-separation leads to the formation of direct bandgap semiconductor nanowire arrays embedded in Ge oriented along the [001] growth direction. The effect of strain and composition on the periodicity were decoupled by growth on Ge(001) and partially relaxed SiYGe-1-y/Ge(001) virtual substrates. The experimental results are compared with a kinetic linear instability model and the experimental results show good agreement with this theoretical model for phase separation during dynamic growth.Citation
Physical Review B (Condensed Matter and Materials Physics)
Pub Type
Journals
Download Paper
Keywords
Asaro-Tiller, decomposition, solute expansion, Stranski-Krastanov
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created June 4, 2006, Updated October 12, 2021