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Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines
Published
Author(s)
Bin Li, Min K. Kang, Kuan Lu, Rui Huang, Paul S. Ho, Richard A. Allen, Michael W. Cresswell
Abstract
This letter demonstrates a method to fabricate single-crystal Si nanolines, with a rectangular cross section and atomically flat sidewalls. The high quality of these nanolines leads to superb mechanical properties, with the strain to fracture estimated by nanoindentation tests close to the theoretical limit. A large displacement burst before fracture was observed, which is attributed to a buckling mechanism. Numerical simulations show that the critical load for buckling depends on the friction at the contact surface.
Li, B.
, Kang, M.
, Lu, K.
, Huang, R.
, Ho, P.
, Allen, R.
and Cresswell, M.
(2007),
Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines, Nano Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32747
(Accessed October 24, 2025)