Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors

Published

December 1, 2005

Author(s)

Sang-Mo Koo, Qiliang Li, Monica D. Edelstein, Curt A. Richter, Eric M. Vogel

Abstract

We report an approach to engineer the local band structure of silicon nanowire (SiNW) field-effect transistors (FETs) by using a dual-gated structure. In this device structure, by changing the local bandgap profile of the channel, the top-gate can suppress the ambipolar conduction which is one of the limiting factors of nanotube- or nanowire FETs as required for complimentary logic applications. Our experimental results indicate that an improved on/off current ratio and superior top-gate control with tunable electron- or hole- dominant conductions can be achieved in the SiNW FETs (Wnano ?? 60 nm), compared to simultaneously prepared control devices of large channel width (Wref ?? 5 ??m). It has also been shown by 2-dimensional numerical simulations that the electrostatic bandgap engineering effect by the top-gate is enhanced as the channel width of the FETs decreases.

Citation

Nanotechnology

Volume

5

Issue

12

Pub Type

Journals

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Keywords

Silicon Nanowire, Nanowire transistor, Nanowire FET, semiconductor device

Citation

Koo, S. , Li, Q. , Edelstein, M. , Richter, C. and Vogel, E. (2005), Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors, Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32067 (Accessed October 9, 2025)