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Self-Assembled Monolayers Exposed by Metastable Argon and Metastable Helium for Neutral Atom Lithography and Atomic Beam Imaging
Published
Author(s)
A Bard, K K. Berggren, J L. Wilbur, John D. Gillaspy, S L. Rolston, Jabez J. McClelland, William D. Phillips, M Prentiss, G M. Whitesides
Abstract
We used a beam of noble gas atoms in a metastable excited state to expose a thin (1.5nm self-assembled monolayer resist applied over a gold-coated silicon wafer. We determined exposure damage as a function of dose of metastable atoms by processing the samples in a wet-chemical etch to remove the gold from unprotected regions, and then measuring the reflectivity with a laser and observing the microstructure with an atomic force microscope. We found that the minimum dose required to damage the resist substantially was 1.7(3) x 1015 atoms/cm2 for metastable helium, and 25(7) x 1015 atoms/cm2 for metastable argon.
Citation
Journal of Vacuum Science and Technology B
Volume
15
Issue
5
Pub Type
Journals
Citation
Bard, A.
, Berggren, K.
, Wilbur, J.
, Gillaspy, J.
, Rolston, S.
, McClelland, J.
, Phillips, W.
, Prentiss, M.
and Whitesides, G.
(1997),
Self-Assembled Monolayers Exposed by Metastable Argon and Metastable Helium for Neutral Atom Lithography and Atomic Beam Imaging, Journal of Vacuum Science and Technology B
(Accessed October 4, 2025)