U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

A New Interface Defect Spectroscopy Method

Published

Author(s)

Jason Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin Cheung, Fei Zhang, Chen Wang, Jason Campbell, John S. Suehle, Viniyak Tilak, Jody Fronheiser

Abstract

A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.
Proceedings Title
International Symposium on VLSI Technology, Systems and Applications
Conference Dates
April 25-27, 2011
Conference Location
Hsinchu, TW
Pub Type
Conferences

Download Paper

https://doi.org/10.1109/vtsa.2011.5872242
Local Download

Keywords

interface states, Pb centers, charge pumping
Polymers

Citation

Ryan, J. , Yu, L. , Han, J. , Kopanski, J. , Cheung, K. , Zhang, F. , Wang, C. , Campbell, J. , Suehle, J. , Tilak, V. and Fronheiser, J. (2011), A New Interface Defect Spectroscopy Method, International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TW, [online], https://doi.org/10.1109/vtsa.2011.5872242, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907968 (Accessed June 1, 2026)
Additional citation formats

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created April 11, 2011, Updated May 7, 2026
Was this page helpful?