A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.
Proceedings Title: Proceedings of the IEEE International Reliability Physics Symposium
Conference Dates: April 10-14, 2011
Conference Location: Monterey, CA
Conference Title: IEEE International Reliability Physics Symposium
Pub Type: Conferences
interface states, Pb centers, charge pumping