Epitaxial growth of graphene layers on 6H-SiC(0001) substrates have been studied in order to improve graphenes performance for metrological applications. A face-to-face (FTF) sublimation method at 2000 °C and in Ar background atmosphere is used to inhibit the rates of SiC decomposition and Si sublimation and as a means of controlling the graphene layer development. Sample surface morphology and its relation to changes in the growth conditions are described.
Proceedings Title: Conference on Precision Electromagnetic Measurements 2012
Conference Dates: June 30-July 6, 2012
Conference Location: Washington, DC
Pub Type: Conferences
Electrical resistance standards, epitaxial growth, graphene, surface morphology, quantum Hall effect