Field-driven sense elements for chirality-dependent domain wall detection and storage

Published

December 10, 2013

Author(s)

Samuel R. Bowden, John Unguris

Abstract

A method for locally sensing and storing data of transverse domain wall chirality in planar nanowire logic and memory systems is presented. Patterned elements, in close proximity to the nanowires, respond to the asymmetry in the stray field from the domain wall to produce a chirality-dependent response. When a bias field is applied, a stray-field-assisted reversal of the element magnetization results in a reversed remanent state, measurable by scanning electron microscopy with polarization analysis (SEMPA). The elements are designed as triangles with tips pointing toward the nanowire, allowing the shape anisotropy to be dominated by the base but having a portion with lower volume and lower energy barrier closest to the domain wall. Micromagnetic modeling assists in the design of the nanowire-triangle systems and experiments using SEMPA confirm the importance of aspect ratio and spacing given a constant bias field magnitude.

Citation

Journal of Applied Physics

Volume

114

Issue

22

Pub Type

Journals

Download Paper

https://doi.org/10.1063/1.4846075

Local Download

Keywords

Magnetic Logic, Domain Wall Chirality, Magnetic Nanowires, Magnetic Sensors

Citation

Bowden, S. and Unguris, J. (2013), Field-driven sense elements for chirality-dependent domain wall detection and storage, Journal of Applied Physics, [online], https://doi.org/10.1063/1.4846075, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=914540 (Accessed October 18, 2025)