UV-enabled Defect Engineering in Multilayer GaSe and InSe and UV Writing of the Grating Pattern

Published

November 25, 2025

Author(s)

Bhojraj Bhandari, Sinto Varghese, Amar Ghimire, Bimal Neupane, Sicheng Wang, Yan Jiang, Roberto Rodrigues, Sergiy Krylyuk, Albert Davydov, Yuanxi Wang, Hao Yan, Jingbiao Cui, Yuankun Lin

Abstract

III−VI post-transition-metal chalcogenides are layered semiconductor materials that exhibit direct band gaps in multilayers. Defect engineering is essential in 2D layered semiconductors for functional devices. Here, we report defect engineering in multilayer gallium selenide (GaSe) and indium selenide (InSe), where defects generated by ultraviolet (UV, 325 nm) laser irradiation result in an additional photoluminescence (PL) line. The additional PL line is due to defect-bound excitons. Characteristics of the defect emission are similar in GaSe and InSe samples subjected to UV irradiation, air annealing, and hydrostatic pressure. Two-beam UV interference was applied to create grating patterns with a periodic array of low and high densities of defects in GaSe. Density functional theory has identified the defect type in GaSe. The results provide valuable insights into defect generation and UV scribing of photonic circuits in 2D Se-based multilayers for optical integration in a 2D platform.

Citation

ACS Applied Optical Materials

Volume

3

Pub Type

Journals

Download Paper

https://doi.org/10.1021/acsaom.5c00423

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Keywords

Defect Engineering, grating fabrication, 2D multilayered materials, photoluminescence, exciton, density functional theory, thermal annealing, UV-irradiation, fluorescence lifetime, GaSe, InSe

Citation

Bhandari, B. , Varghese, S. , Ghimire, A. , Neupane, B. , Wang, S. , Jiang, Y. , Rodrigues, R. , Krylyuk, S. , Davydov, A. , Wang, Y. , Yan, H. , Cui, J. and Lin, Y. (2025), UV-enabled Defect Engineering in Multilayer GaSe and InSe and UV Writing of the Grating Pattern, ACS Applied Optical Materials, [online], https://doi.org/10.1021/acsaom.5c00423, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=960861 (Accessed May 27, 2026)

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