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The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

Published

Author(s)

Mark Anders, Patrick M. Lenahan, Aivars Lelis
Citation
Materials Science Forum
Volume
924

Citation

Anders, M. , Lenahan, P. and Lelis, A. (2018), The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping, Materials Science Forum, [online], https://doi.org/10.4028/www.scientific.net/MSF.924.469, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=929098 (Accessed June 18, 2026)
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Created June 5, 2018, Updated May 20, 2026
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