Electrical interconnects for silicon spin qubits

Published

February 2, 2026

Author(s)

Christopher White, Anthony Sigillito, Michael Gullans

Abstract

Scalable spin qubit devices will likely require long-range qubit interconnects. We propose to create such an interconnect with a resistive topgate. The topgate is positively biased, to form a channel between the two dots; an end-to-end voltage difference across the nanowire results in an electric field that propels the electron from source dot to target dot. The electron is momentum-incoherent, but not necessarily spin-incoherent; we evaluate threats to spin coherence due to spin-orbit coupling, valley physics, and nuclear spin impurities. We find that spin-orbit coupling is the dominant threat, but momentum-space motional narrowing due to frequent scattering partially protects the electron, resulting in characteristic decoherence lengths ∼ 15 mm for plausible parameters.

Citation

Physical Review B

Volume

113

Issue

8

Pub Type

Journals

Download Paper

https://doi.org/10.1103/tmpl-pjvw

Local Download

Keywords

quantum computing, quantum dots, silicon spin qubits

Citation

White, C. , Sigillito, A. and Gullans, M. (2026), Electrical interconnects for silicon spin qubits, Physical Review B, [online], https://doi.org/10.1103/tmpl-pjvw, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=958898 (Accessed February 14, 2026)