A bottom-up approach for traceable nano dimensional metrology

Published

May 29, 2017

Author(s)

Gaoliang Dai, Jens Fluegge, Harald Bosse, Ronald G. Dixson

Abstract

This paper presents a bottom-up approach which uses the transmission electron microscopy (TEM) and the reference value of the crystal silicon lattice constant as a pathway for traceability to the SI metre for applications in dimensional nanometrology. Compared to the traditional traceability approach based on optical interferometry, this bottom-up approach offers several important advantages: the atom spacing is much shorter than the optical wavelength, offering higher measurement resolution; it avoids a significant error source ̶ the inherent nonlinearity error of optical interferometry; and more importantly its measurement results suffer much less from the probe-sample interaction for feature width metrology thanks to the true atomic resolution power of TEM. The bottom-up approach has been realised for the feature width metrology of nanostructures both at PTB and NIST. More recently, a comparison on a crystal silicon line width standard, referred to as the IVPS100-PTB, has been performed between two institutes. Excellent agreement has been achieved, which confirms the feasibility of applying the proposed bottom-up approach for traceable dimensional nanometrology.

Conference Dates

May 29-June 2, 2017

Conference Location

Hannover, DE

Conference Title

Euspen - 17th International Conference and Exhibition

Pub Type

Conferences

Keywords

dimensional nanometrology, traceability, crystal silicon lattice, feature width, transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM)

Citation

Dai, G. , Fluegge, J. , Bosse, H. and Dixson, R. (2017), A bottom-up approach for traceable nano dimensional metrology, Euspen - 17th International Conference and Exhibition, Hannover, DE (Accessed May 22, 2025)