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PUBLICATIONS

Thermal engineering increases current density in AlGaN/GaN superlattice devices

Published

Author(s)

Georges Pavlidis, Muhammad Jamil, Shawn Keebaugh, Josei Chang, Matthew Doerflein, Shamima Afroz, Robert S. Howell, Andrea Centrone
Citation
Applied Physics Letters
Volume
125
Issue
1
Pub Type
Journals

Download Paper

https://doi.org/10.1063/5.0214487
Local Download
Nanotechnology, Metrology and Electronics

Citation

Pavlidis, G. , Jamil, M. , Keebaugh, S. , Chang, J. , Doerflein, M. , Afroz, S. , Howell, R. and Centrone, A. (2024), Thermal engineering increases current density in AlGaN/GaN superlattice devices, Applied Physics Letters, [online], https://doi.org/10.1063/5.0214487, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956368 (Accessed October 20, 2025)

Issues

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Created July 1, 2024, Updated July 22, 2024
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