Rishav Harsh (IntlAssoc)

Rishav Harsh is an experimental condensed matter researcher investigating electronic and magnetic properties of novel two dimensional materials using ultra-low temperature scanning tunneling microscopy. He obtained his PhD from Universite Paris Cite (France) studying electronic interaction between molecular lattice and van der Waals materials such as graphene. After that, he joined the 2DSPM group at Donostia International Physics Center (Spain) as a Marie Curie Postdoctoral Fellow where he studied emergent ground properties of single layer transition metal dichalcogenides, another 2D material with strong electron-electron correlations. At NIST, he is working with Dr. Joseph A Stroscio on developing new resistance standard by exploiting quantum anomalous hall effect phenomena in magnetic topological insulators. Apart from using a one of its kind, custom built ultra-low temperature STM at NIST, he is actively engaged in growing quantum materials using molecular beam epitaxy under ultra-high vacuum conditions.

Notable Publications

[2023] Evidence for ground state coherence in a two-dimensional Kondo lattice
Wen Wan, Rishav Harsh, Antonella Meninno, Paul Dreher, Sandra Sajan, Haojie Guo, Ion Errea, Fernando de Juan, Miguel M Ugeda
Nature communications 14 (1), 7005

[2022] Identification and Manipulation of Defects in Black Phosphorus
Rishav Harsh, Sourav Mondal, Devina Sharma, Mehdi Bouatou, Cyril Chacon, Maxim Ilyn, Celia Rogero, Vincent Repain, Amandine Bellec, Yann Girard, Sylvie Rousset, Raman Sankar, Woei Wu Pai, Shobhana Narasimhan, Jérôme Lagoute
The Journal of Physical Chemistry Letters 13 (27), 6276-6282

[2019] Controlling Hydrogen-Transfer Rate in Molecules on Graphene by Tunable Molecular Orbital Levels
Rishav Harsh, Frédéric Joucken, Cyril Chacon, Vincent Repain, Yann Girard, Amandine Bellec, Sylvie Rousset, Robert Sporken, Alexander Smogunov, Yannick J. Dappe, Jérôme Lagoute
The Journal of Physical Chemistry Letters 10 (21), 6897−6903